Dr. Jeremy Rashid is a technical advisor and European Patent Attorney in the Global Intellectual Property Practice Group. Jeremy has experience in drafting and prosecution of UK, European and PCT patent applications, advising clients on freedom to operate and assessing patent infringement and invalidity. Jeremy also has experience with contested post-grant proceedings in Europe and the US.
Jeremy has spent several years working on patents and applications in the fields of high tech electronics, including satellite and defense technologies, computer implemented inventions and business transaction systems. He is also familiar with medical devices, having worked on a large portfolio of multi-jurisdictional cases dealing with endosurgical tools, ultrasonic cauterization equipment, suturing tools, medical imaging systems, analyte test meters, stent technology, wound dressings and irrigation systems.
Jeremy graduated from the University of Cambridge with a master's and PhD in Electrical Engineering, specializing in diamond for electronics. His studies included solid state device physics, wide bandgap semiconductor materials, device processing and fabrication, mathematical device modeling, automotive electronics and electronic device packaging.
Prior to joining the patent profession, Jeremy was a post-doctoral research associate at the Centre of Advanced Photonics and Electronics in Cambridge where he focused on the application of carbon and single crystal diamond to quantum and power electronic devices. Jeremy has several patents to his name, and is the author of a number of research papers published in scientific journals.
Bars and Courts
European Patent Office
US Patent and Trademark Office
Queen Mary University of London
University of Cambridge
University of Cambridge
Bachelor of Engineering
National University of Singapore
"Numerical parameterization of CVD single crystal diamond for device simulation and analysis," IEEE Transactions on Electron Devices, vol. 55 (2008)
"High conductivity d-doped single crystal diamond Schottky m-i-p+ diodes," IEEE Int. Symp. Power Semiconductor Devices (2008)
"Analysis of novel packaging techniques for high power electronics in SiC," Materials Research Society, vol. 556 – 557 (2007)
"Modelling of single-crystal diamond Schottky diodes for high-voltage applications," Journal of Diamond and Related Materials, vol. 15 (2006)
"Trench oxide protection for 10kV 4H-SiC trench MOSFETs," IEEE Power Electronics and Drive Systems, vol. 2 (2003)